PART |
Description |
Maker |
IHY20N135R3 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
IKW30N65WR5 IKW30N65WR5-15 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
IHD06N60RA |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
IHW15N120R2 |
Reverse Conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
IHW30N160R2 |
TrenchStop Reverse Conducting (RC-)IGBT with monolithic body diode
|
Infineon Technologies AG
|
5SHX10H6010 |
Reverse Conducting Integrated Gate-Commutated Thyristor
|
The ABB Group
|
5SHX04D4502 |
Reverse Conducting Integrated Gate-Commutated Thyristor
|
The ABB Group
|
5SHX03D6004 |
Reverse Conducting Integrated Gate-Commutated Thyristor
|
The ABB Group
|
FGR3000FX90DA |
THYRISTOR|REVERSE-CONDUCTING|4.5KV V(DRM)|TO-200VAR120 晶闸管|反向导电| 4.5KV五(DRM)的|00VAR120
|
Mitsubishi Electric, Corp.
|
TISPPBL3 TISPPBL3D TISPPBL3D-S TISPPBL3DR |
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON MICROELECTRONICS SUBSCRIBER LINE INTERFACE CIRCUITS (SLIC) TELECOM, SURGE PROTECTION CIRCUIT, PDSO8 DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON MICROELECTRONICS SUBSCRIBER LINE INTERFACE CIRCUITS (SLIC) 双远期导电的P -门晶闸管爱立信微电子用户线接口电路电路(SLIC
|
Bourns Inc. Bourns, Inc.
|